非晶InGaAs探測器材料光電特性研究
PHOTOELECTRIC CHARACTERSTICS OF AMORFHOUS InGaAs  DETECTOR  MATERIAL

摘  要
非晶態(tài)材料具有長程無序、短程有序的結(jié)構(gòu)特點(diǎn)，這使得非晶態(tài)材料在能帶結(jié)構(gòu)上與晶體材料具有共性的同時(shí)，還存在一定的差異。但是目前國內(nèi)外還缺乏非晶態(tài)半導(dǎo)體材料全面和詳盡的研究。本文開展了非晶InxGa1-xAs（0≤x≤1）薄膜制備、表征、和氫鈍化方面的研究工作。
我們采用射頻磁控濺射以及分子束外延技術(shù)制備非晶態(tài)的InGaAs薄膜。利用X射線衍射、掃描電鏡等手段對非晶態(tài)薄膜的結(jié)構(gòu)和表面特性進(jìn)行了表征，并由X射線衍射結(jié)果計(jì)算出徑向分布函數(shù)和雙體相關(guān)函數(shù)，獲得了a-InxGa1-xAs薄膜的微觀結(jié)構(gòu)數(shù)據(jù)。在Matlab編程基礎(chǔ)上，擬合出光學(xué)常數(shù)曲線, 分析了工作氣壓對光學(xué)常數(shù)的影響。  
此外，對薄膜材料進(jìn)行了摻氫研究，分析了摻氫后的薄膜材料在結(jié)構(gòu)、形貌上以及光學(xué)帶隙上的變化，通過分析知道，氫氣的摻入減少了薄膜材料中的缺陷態(tài)密度，導(dǎo)致光學(xué)帶隙值增大，吸收邊出現(xiàn)“藍(lán)移”現(xiàn)象。

關(guān)鍵詞：摻氫 光學(xué)帶隙 薄膜 非晶

ABSTRACT
Amorphous materials and crystalline materials have common character,but they have some differences. The structure  character of amorphous materials are long-range disorder and short-range order comperared.Semiconductors are still lack of systematic and detailed study. In this paper, our study on amorphous(a-) InxGa1-xAs films includes the preparation, characterization, and hydrogen passivation.
 We deposited a-InGaAs flims by molecular-beam epitaxy and RF magnetron sputtering.We have characterized structure and surface morphology of amorphous films by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) . And we calculate the radical distribution function and pair correlation function from XRD in order to obtain microstructure data of amorphous InxGa1-xAs thin films. On basis of programming in matlab, we  have fitteda curve of optical constants  and have analyzed the influence of working  pressure on the optical constants.
In addition，We have deposited a-GaAs:H films. We investigated the influence of doping hydrogen on the structure, surface morphology, and photoelectrical properties.We found the passivation of hydrogen on the amorphous films. Hydrogen induces decreasing state density and blue shifts in absorption edge.

Key words: doping hydrogen, optical band-gap,thin film, amorphous

目  錄

摘  要 I
ABSTRACT II
目  錄 III
第一章  緒論 1
1.1非晶態(tài)材料發(fā)展回顧 1
1.2非晶態(tài)材料的主要特征 2
1.3非晶態(tài)材料結(jié)構(gòu)的表征方法 3
1.4研究目的及意義 6
第二章  非晶態(tài)材料基本光電性質(zhì)及主要的制備方法 7
2.1影響非晶態(tài)材料光電性質(zhì)的因素 7
2.2非晶態(tài)材料基本光電性質(zhì) 9
2.3非晶態(tài)材料的主要制備方法 17
第三章  磁控濺射a-InGaAs薄膜的制備及光電特性研究 21
3.1磁控濺射原理及薄膜的生長過程 21
3.2a-InGaAs薄膜的制備工藝及組分分析 24
3.3a-InGaAs薄膜的結(jié)構(gòu)分析 25
3.4a-InGaAs薄膜光學(xué)帶隙及光學(xué)常數(shù) 28
3.5a-InGaAs薄膜的載流子輸運(yùn)性質(zhì)分析 32
第四章 MBE制備a-InGaAs薄膜材料及光電性質(zhì)研究 33
4.1a-InGaAs薄膜材料的制備及結(jié)構(gòu)分析 33
4.2a-InGaAs薄膜的電學(xué)性質(zhì) 35
4.3a-InGaAs薄膜的光學(xué)性質(zhì) 36
第五章 a-InGaAs:H薄膜的制備以及摻氫對結(jié)構(gòu)及光電特性的影響 38
5.1a-InGaAs:H薄膜的制備工藝 38
5.2a-InGaAs:H薄膜的制備以及氫的鈍化作用 38
5.3a-InGaAs:H薄膜光學(xué)帶隙的分析 40
結(jié)論 43
致謝 44
參考文獻(xiàn) 45