快速晶化法制備n型晶硅薄膜.zip
快速晶化法制備n型晶硅薄膜,包括開題報(bào)告，任務(wù)書，ppt，翻譯原文和譯文摘 要iabstractii1 引言11.1太陽能電池的發(fā)展概述11.2氫化非晶硅薄膜發(fā)展概述21.3氫化非晶硅薄膜的亞穩(wěn)性31.4氫化非晶硅薄膜常用的制備方法31.5固相晶化技術(shù)(spc)41.6快速熱處理（rtp）42 實(shí) 驗(yàn)62.1實(shí)驗(yàn)材料62.2薄膜的制備62.3薄膜...
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內(nèi)容介紹
原文檔由會(huì)員 牛奶咖啡 發(fā)布
包括開題報(bào)告，任務(wù)書，ppt，翻譯原文和譯文
摘 要 I
Abstract II
1 引 言 1
1.1太陽能電池的發(fā)展概述 1
1.2氫化非晶硅薄膜發(fā)展概述 2
1.3氫化非晶硅薄膜的亞穩(wěn)性 3
1.4氫化非晶硅薄膜常用的制備方法 3
1.5固相晶化技術(shù)(SPC) 4
1.6快速熱處理（RTP） 4
2 實(shí) 驗(yàn) 6
2.1實(shí)驗(yàn)材料 6
2.2薄膜的制備 6
2.3薄膜樣品的快速熱處理 7
2.4制備薄膜試樣的表征 8
3 結(jié)果與討論 10
3.1退火溫度對(duì)氫化非晶硅薄膜的電阻率影 12
3.2退火時(shí)間對(duì)氫化非晶硅薄膜的電阻率影響 15
4結(jié) 論 17
參考文獻(xiàn) 18
致 謝 20
快速晶化法制備n型晶硅薄膜
摘 要
本論文首先論述了為什么要對(duì)氫化非晶薄膜進(jìn)行固相晶化，通過采用了PECVD在石英襯底上制備磷元素?fù)诫s的n型非晶硅薄膜，采用高溫快速熱處理方法進(jìn)行處理，采用四探針對(duì)薄膜試樣前后的電阻進(jìn)行測(cè)試，采用橢偏儀對(duì)薄膜試樣熱處理后的膜厚進(jìn)行測(cè)試。通過對(duì)熱處理前后的薄膜試樣的電阻率進(jìn)行比較，通過控制退火溫度與退火時(shí)間來獲得的低電阻率的薄膜試樣最佳工藝。因此，本論文特別對(duì)薄膜熱處理前后的電阻率變化進(jìn)行了詳細(xì)的分析。
通過實(shí)驗(yàn)的數(shù)據(jù)，我們明顯可以發(fā)現(xiàn)經(jīng)過高溫?zé)崽幚砗蟮谋∧ぴ嚇拥碾娮杪首冃×撕芏啵罕∧な綐拥碾娮杪首兓孰S著退火溫度升高而增大，退火時(shí)間從10s到20s時(shí)，薄膜試樣的電阻率的變化率增大。其中經(jīng)過20s與1000℃熱處理前的電阻率是熱處理后的8000倍。隨著退火溫度的升高，熱處理前后的薄膜試樣電阻率變化率增大。
關(guān)鍵詞：n型非晶硅薄膜 ;快速熱處理；固相晶化;電阻率； 膜厚
Rapid thermal processing on n-type crystalline silicon thin film
Abstract
In this paper, firstly, Why should the solid phase crystallization of hydrogenated amorphous silicon thin film thin. Then, a-Si:H films were prepared on qurtz substrates by PECVDT。he effect of rapid thermal processing on the samples were studied,Resistance of thin film samples before and after the annealing process were test by four probe method. Ellip sometry were used to test the thickness, the comparison of the resistivity of the films before and after heat treatment,By controlling the annealing temperature and time to obtain the low resistivity of thin film samples the best process。Therefore, the thesis particularly change of resistivity of the films are analyzed in detail.
According to the data, it can be found that the resistivity of thin film samples decreased heavily after heat treatment, The change of resistivity film style ratio increases with the increase of annealing temperature。The annealing time from 10s to 20s, the change of resistivity of the film sample rate。before the heat treatment is 8000 times after at 20s and 1000℃ heat treatment。As the processing temperature increases, the rate of the resistivities of the samples before and after heat treatment changes increases。
Key words：N type amorphous silicon thin film;rapid thermal processing; Solid phase crystallization；resistivity;thickness
摘 要 I
Abstract II
1 引 言 1
1.1太陽能電池的發(fā)展概述 1
1.2氫化非晶硅薄膜發(fā)展概述 2
1.3氫化非晶硅薄膜的亞穩(wěn)性 3
1.4氫化非晶硅薄膜常用的制備方法 3
1.5固相晶化技術(shù)(SPC) 4
1.6快速熱處理（RTP） 4
2 實(shí) 驗(yàn) 6
2.1實(shí)驗(yàn)材料 6
2.2薄膜的制備 6
2.3薄膜樣品的快速熱處理 7
2.4制備薄膜試樣的表征 8
3 結(jié)果與討論 10
3.1退火溫度對(duì)氫化非晶硅薄膜的電阻率影 12
3.2退火時(shí)間對(duì)氫化非晶硅薄膜的電阻率影響 15
4結(jié) 論 17
參考文獻(xiàn) 18
致 謝 20
快速晶化法制備n型晶硅薄膜
摘 要
本論文首先論述了為什么要對(duì)氫化非晶薄膜進(jìn)行固相晶化，通過采用了PECVD在石英襯底上制備磷元素?fù)诫s的n型非晶硅薄膜，采用高溫快速熱處理方法進(jìn)行處理，采用四探針對(duì)薄膜試樣前后的電阻進(jìn)行測(cè)試，采用橢偏儀對(duì)薄膜試樣熱處理后的膜厚進(jìn)行測(cè)試。通過對(duì)熱處理前后的薄膜試樣的電阻率進(jìn)行比較，通過控制退火溫度與退火時(shí)間來獲得的低電阻率的薄膜試樣最佳工藝。因此，本論文特別對(duì)薄膜熱處理前后的電阻率變化進(jìn)行了詳細(xì)的分析。
通過實(shí)驗(yàn)的數(shù)據(jù)，我們明顯可以發(fā)現(xiàn)經(jīng)過高溫?zé)崽幚砗蟮谋∧ぴ嚇拥碾娮杪首冃×撕芏啵罕∧な綐拥碾娮杪首兓孰S著退火溫度升高而增大，退火時(shí)間從10s到20s時(shí)，薄膜試樣的電阻率的變化率增大。其中經(jīng)過20s與1000℃熱處理前的電阻率是熱處理后的8000倍。隨著退火溫度的升高，熱處理前后的薄膜試樣電阻率變化率增大。
關(guān)鍵詞：n型非晶硅薄膜 ;快速熱處理；固相晶化;電阻率； 膜厚
Rapid thermal processing on n-type crystalline silicon thin film
Abstract
In this paper, firstly, Why should the solid phase crystallization of hydrogenated amorphous silicon thin film thin. Then, a-Si:H films were prepared on qurtz substrates by PECVDT。he effect of rapid thermal processing on the samples were studied,Resistance of thin film samples before and after the annealing process were test by four probe method. Ellip sometry were used to test the thickness, the comparison of the resistivity of the films before and after heat treatment,By controlling the annealing temperature and time to obtain the low resistivity of thin film samples the best process。Therefore, the thesis particularly change of resistivity of the films are analyzed in detail.
According to the data, it can be found that the resistivity of thin film samples decreased heavily after heat treatment, The change of resistivity film style ratio increases with the increase of annealing temperature。The annealing time from 10s to 20s, the change of resistivity of the film sample rate。before the heat treatment is 8000 times after at 20s and 1000℃ heat treatment。As the processing temperature increases, the rate of the resistivities of the samples before and after heat treatment changes increases。
Key words：N type amorphous silicon thin film;rapid thermal processing; Solid phase crystallization；resistivity;thickness
