材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文

Hot-wire CVD deposited n-type μc-Si films for μc-Si/c-Siheterojunction solar cell applications

熱線式CVD沉積n型μc-Si薄膜對(duì)于μc-Si /同單晶硅異質(zhì)結(jié)太陽能電池的應(yīng)用

AbstractPhosphorous-doped microcrystalline silicon (μc-Si) films were prepared using hot-wire chemical vapor deposition (HWCVD). Structural,electrical and optical properties of these thin films were systematically studied as a function of PH3gas mixture ratio. We report recent results forp-type crystalline silicon-based heterojunction (HJ) solar cells using the HWCVD n-μc-Si film to form an n–p junction. The surface morphologyof the crystalline Si substrate after hydrogen treatment was examined using atomic force microscopy. A transfer length method was used to modifythe indium–tin–oxide (ITO) deposition parameters in order to reduce front ITO/n-μc-Si contact resistance. In our best solar cell sample (1 cm2)without any buffer layer, the conversion efficiency of 15.1% has been achieved with an open circuit voltage of 0.615 V, fill factor of 0.71 and shortcircuit current density of 34.6 mA/cm2under 100 mW/cm2condition. The spectral response of this cell will also be discussed.

摘 要
磷摻雜微晶硅(μc-Si)薄膜是準(zhǔn)備使用熱線化學(xué)汽相淀積(HWCVD)。電氣結(jié)構(gòu),和光學(xué)性質(zhì)這些薄膜系統(tǒng)的研究作為一個(gè)函數(shù)的PH 3氣體混合比例。我們報(bào)告最近的結(jié)果p型晶體硅基異質(zhì)結(jié)(HJ)太陽能電池使用HWCVD n-μc-Si膜形成一個(gè)np結(jié)。表面形貌的晶體硅基片上的氫被檢查后治療使用原子力顯微鏡。一個(gè)傳輸長度的方法被用來修改載(ITO)的沉積參數(shù)以減少ITO / n-μc-Si前接觸電阻。在我們最好的太陽能電池樣品(1cm2)沒有任何緩沖層,轉(zhuǎn)換效率為15.1%,取得了一個(gè)開放的電路電壓0.615 V,填充系數(shù)為0.71和短電路電流密度34.6 mA /cm2，在100 mW /cm2條件。光譜響應(yīng)的電池也會(huì)被討論。