低溫快速熱處理制備多晶硅 [外文翻譯].zip
低溫快速熱處理制備多晶硅 [外文翻譯],材料科學(xué)與工程 材料物理與化學(xué)，外文文獻翻譯及原文crystallized si films by lowtemperature rapid thermal annealing ofamorphous silicon低溫快速熱處理制備多晶硅low~temperature rapid thermal annealing ...
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材料科學(xué)與工程 材料物理與化學(xué)，外文文獻翻譯及原文
Crystallized Si films by lowtemperature rapid thermal annealing ofamorphous silicon
低溫快速熱處理制備多晶硅
Low~temperature rapid thermal annealing has been used to crystallize both undoped anddoped amorphous silicon (a-SO films deposited at low temperatures. The poiycrystalline filmsproduced are completely crystallized with time~temperature budgets such as 4 min at 700°C.Unlike deposited polycrystalline Si films, the grain size in these crystallized films is not limitedby film thickness. In the case of undoped a-Si films crystallized by this approach, the resultingconductivity is comparable to that achieved in undoped polycrystaUine Si films produced bymuch higher processing temperatures. In the case of doped a-Si films, the resulting crystaHizedfilm yields a conductivity of 160 S/cm, a value which is comparable to the highest reported fordoped polycrystalline and microcrystalline silicon. These doped films are found to havemobility values of ~ 13 cm2IV s.
低溫快速熱處理技術(shù)在低溫時結(jié)晶摻雜和非摻雜非晶硅的過程已經(jīng)得到運用。不同于一般沉積多晶硅薄膜的技術(shù)，這些薄膜的晶粒尺寸并不受薄膜厚度的限制， 它的生長完全的取決于結(jié)晶時間和溫度，如，4分鐘700℃。就這種無參雜的非晶硅的而言，通過這種技術(shù)，其結(jié)果與在高溫下沉積無參雜多晶硅的電導(dǎo)率相同。至于參雜的非晶硅薄膜，結(jié)晶后的電導(dǎo)率可達到 160 S/cm，比得上參雜的多晶硅和微晶硅的最高值，并且，這些結(jié)晶后的薄膜載流子遷移率可達 13 cm2 /V s。
Crystallized Si films by lowtemperature rapid thermal annealing ofamorphous silicon
低溫快速熱處理制備多晶硅
Low~temperature rapid thermal annealing has been used to crystallize both undoped anddoped amorphous silicon (a-SO films deposited at low temperatures. The poiycrystalline filmsproduced are completely crystallized with time~temperature budgets such as 4 min at 700°C.Unlike deposited polycrystalline Si films, the grain size in these crystallized films is not limitedby film thickness. In the case of undoped a-Si films crystallized by this approach, the resultingconductivity is comparable to that achieved in undoped polycrystaUine Si films produced bymuch higher processing temperatures. In the case of doped a-Si films, the resulting crystaHizedfilm yields a conductivity of 160 S/cm, a value which is comparable to the highest reported fordoped polycrystalline and microcrystalline silicon. These doped films are found to havemobility values of ~ 13 cm2IV s.
低溫快速熱處理技術(shù)在低溫時結(jié)晶摻雜和非摻雜非晶硅的過程已經(jīng)得到運用。不同于一般沉積多晶硅薄膜的技術(shù)，這些薄膜的晶粒尺寸并不受薄膜厚度的限制， 它的生長完全的取決于結(jié)晶時間和溫度，如，4分鐘700℃。就這種無參雜的非晶硅的而言，通過這種技術(shù)，其結(jié)果與在高溫下沉積無參雜多晶硅的電導(dǎo)率相同。至于參雜的非晶硅薄膜，結(jié)晶后的電導(dǎo)率可達到 160 S/cm，比得上參雜的多晶硅和微晶硅的最高值，并且，這些結(jié)晶后的薄膜載流子遷移率可達 13 cm2 /V s。
