材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文

Transmission electron microscopy investigation of the micro-defectsin Czochralski silicon

用透射電子顯微鏡調(diào)查直拉單晶硅中的微缺陷

a b s t r a c t
The influence of rapid thermal annealing (RTA) on the formation of oxygen precipitates and extendeddefects has been investigated by transmission electron microscopy (TEM) in heavily and lightly boron-doped Czochralski (Cz) silicon, respectively. It reveals that for the heavily doped specimen undergo RTApre-annealing, there are oxygen precipitates with high density generated, accompanied with the stackingfaults, while for the specimen without RTA pre-annealing, dislocation generated; as for the lightly dopedspecimen, it found that there are dislocations generated in the specimen undergo RTA pre-annealing,while oxygen precipitate-related dislocations generated in the specimen without RTA pre-annealing,respectively. The main reason is due to the enhancement of oxygen precipitation by heavy boron dopingand the increment of vacancy concentration in the bulk injected into the bulk by RTA pre-annealing.

摘要：快速熱退火對重﹑輕摻硼直拉單晶（CZ）硅中氧沉淀物和擴(kuò)展缺陷的影響已經(jīng)分別使用透射電子顯微鏡調(diào)查研究過。它揭示了，對于重?fù)诫s的試樣經(jīng)過快速熱退火處理后，氧沉淀物產(chǎn)生的密度高，伴隨著堆垛層錯，而對于沒有快速熱退火處理的試樣，也產(chǎn)生了位錯；至于輕摻雜的試樣，它顯示有一些經(jīng)過了快速熱退火處理的樣品中也產(chǎn)生了位錯。而未經(jīng)過快速熱退火處理的樣品氧沉淀物也產(chǎn)生了相關(guān)的位錯。主要原因是由于在快速熱退火中重硼摻雜和空位濃度增量使樣品中氧沉淀物增強(qiáng)。