zno退火緩沖層在al2o3襯底上增長(zhǎng)的外延膜的增強(qiáng)特性和結(jié)構(gòu)特性 [外文翻譯].zip
zno退火緩沖層在al2o3襯底上增長(zhǎng)的外延膜的增強(qiáng)特性和結(jié)構(gòu)特性 [外文翻譯],材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文中文2760字enhancement of the surface and structural properties of znoepitaxial films grown on al2o3substrates utilizing annealed znobuffer...
該文檔為壓縮文件,包含的文件列表如下:
內(nèi)容介紹
原文檔由會(huì)員 牛奶咖啡 發(fā)布
材料科學(xué)與工程 材料物理與化學(xué)，外文文獻(xiàn)翻譯及原文
中文2760字
Enhancement of the surface and structural properties of ZnOepitaxial films grown on Al2O3substrates utilizing annealed ZnObuffer layers
ZnO退火緩沖層在Al2O3襯底上增長(zhǎng)的外延膜的增強(qiáng)特性和結(jié)構(gòu)特性
Abstract
ZnO films were grown on Al2O3(1000) sub-strates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopyimages showed that the surface roughness of the ZnO filmsgrown on ZnO buffer layers annealed in a vacuum was de-creased, indicative of an improvement in the ZnO surfaces.X-ray diffraction patterns showed that the crystallinity of theZnO thin films was enhanced by using the annealed ZnObuffer layer in comparison with the film grown on withouta buffer layer. The improvement of the surface and struc-tural properties of the ZnO films might be attributed to theformation of the Zn-face ZnO buffers due to annealing in avacuum. These results indicate that the surface and struc-tural properties of ZnO films grown on Al2O3substratesare improved by using ZnO buffer layers annealed in avacuum.
摘 要
通過(guò)使用射頻磁控濺射，在有無(wú)ZnO緩沖層的條件下，在Al2O3（1000）襯底上生長(zhǎng)ZnO薄膜。原子力顯微鏡圖像顯示，真空中退火，在ZnO緩沖層表面生長(zhǎng)的ZnO薄膜表面粗糙度降低，反映了ZnO薄膜表面的改進(jìn)。X射線衍射圖表明在緩沖層上生長(zhǎng)的ZnO薄膜通過(guò)退火后的結(jié)晶性比在無(wú)緩沖層生長(zhǎng)的ZnO薄膜的結(jié)晶性要高。ZnO薄膜表面和結(jié)構(gòu)性能的改進(jìn)是由于在真空中退火形成的Zn面ZnO緩沖層。這些結(jié)果表明在Al2O3襯底上生長(zhǎng)的ZnO薄膜表面和結(jié)構(gòu)性能的提高是由于使用緩沖層在真空中退火。
中文2760字
Enhancement of the surface and structural properties of ZnOepitaxial films grown on Al2O3substrates utilizing annealed ZnObuffer layers
ZnO退火緩沖層在Al2O3襯底上增長(zhǎng)的外延膜的增強(qiáng)特性和結(jié)構(gòu)特性
Abstract
ZnO films were grown on Al2O3(1000) sub-strates without and with ZnO buffer layers by using radio-frequency magnetron sputtering. Atomic force microscopyimages showed that the surface roughness of the ZnO filmsgrown on ZnO buffer layers annealed in a vacuum was de-creased, indicative of an improvement in the ZnO surfaces.X-ray diffraction patterns showed that the crystallinity of theZnO thin films was enhanced by using the annealed ZnObuffer layer in comparison with the film grown on withouta buffer layer. The improvement of the surface and struc-tural properties of the ZnO films might be attributed to theformation of the Zn-face ZnO buffers due to annealing in avacuum. These results indicate that the surface and struc-tural properties of ZnO films grown on Al2O3substratesare improved by using ZnO buffer layers annealed in avacuum.
摘 要
通過(guò)使用射頻磁控濺射，在有無(wú)ZnO緩沖層的條件下，在Al2O3（1000）襯底上生長(zhǎng)ZnO薄膜。原子力顯微鏡圖像顯示，真空中退火，在ZnO緩沖層表面生長(zhǎng)的ZnO薄膜表面粗糙度降低，反映了ZnO薄膜表面的改進(jìn)。X射線衍射圖表明在緩沖層上生長(zhǎng)的ZnO薄膜通過(guò)退火后的結(jié)晶性比在無(wú)緩沖層生長(zhǎng)的ZnO薄膜的結(jié)晶性要高。ZnO薄膜表面和結(jié)構(gòu)性能的改進(jìn)是由于在真空中退火形成的Zn面ZnO緩沖層。這些結(jié)果表明在Al2O3襯底上生長(zhǎng)的ZnO薄膜表面和結(jié)構(gòu)性能的提高是由于使用緩沖層在真空中退火。
相關(guān)文檔
