硫摻雜石墨相氮化碳的獨特光電子結構[外文翻譯].rar
硫摻雜石墨相氮化碳的獨特光電子結構[外文翻譯],中文字數(shù)：4088概略內(nèi)容：摘要：電子結構本質上控制著吸光率，氧化還原電位，載流子遷移率，因此控制了半導體光催化劑的光反應性。為獲得更廣的吸收范圍，傳統(tǒng)的改變半導體催化劑電子結構的方法是摻雜陰離子來降低氧化還原電位和/或載流子遷移率，所以其光反應性通常是有限的，并且一些重要的反應可能根本不會發(fā)生。在本文中，具有獨特電子...
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內(nèi)容介紹
原文檔由會員 蝶戀花香閣 發(fā)布
中文字數(shù)：4088
概略內(nèi)容：
摘要：電子結構本質上控制著吸光率，氧化還原電位，載流子遷移率，因此控制了半導體光催化劑的光反應性。為獲得更廣的吸收范圍，傳統(tǒng)的改變半導體催化劑電子結構的方法是摻雜陰離子來降低氧化還原電位和/或載流子遷移率，所以其光反應性通常是有限的，并且一些重要的反應可能根本不會發(fā)生。在本文中，具有獨特電子結構的硫摻雜石墨相氮化碳(C3N4-xSx)，會將提高導帶的最小值，并與輕微的吸光率降低相結合，增加價帶帶寬。在λ>300和400nm時C3N4-xSx存在的光反應中氫氣的生成分別7.2倍和8倍于C3N4。更顯著的是，在λ>400時對于C3N4-xSx可以發(fā)生完成的苯酚的氧化過程，而這對于C3N4來說，即使是λ>300也是不可能的。同一種族的硫代替了晶格氮，隨之而來的量子限制效應被認為是特殊的電子結構引起的，因此表明C3N4-xSx具有良好的光反應性。這一結果提供了設計潛在的有效的光催化劑的一種基本的摻雜方法。
英文字數(shù)（字符數(shù)不計空格）：32018
概略內(nèi)容：
Graphitic carbon nitride (g-C3N4) and boron-doped g-C3N4 were prepared by heating melamine and the mixture of
melamine and boron oxide, respectively. X-ray diffraction, X-ray photoelectron spectroscopy, andUV-vis spectra were
used to describe the properties of as-prepared samples. The electron paramagnetic resonance was used to detect the
active species for the photodegradation reaction over g-C3N4. The photodegradation mechanisms for two typical dyes,
rhodamine B (Rh B) and methyl orange (MO), are proposed based on our comparison experiments. In the g-C3N4
photocatalysis system, the photodegradation of Rh B and MO is attributed to the direct hole oxidation and overall
reaction, respectively; however, for the MO photodegradation the reduction process initiated by photogenerated
electrons is a major photocatalytic process compared with the oxidation process induced by photogenerated holes.
Boron doping for g-C3N4 can promote photodegradation of Rh B because the boron doping improves the dye adsorption
and light absorption of catalyst.
概略內(nèi)容：
摘要：電子結構本質上控制著吸光率，氧化還原電位，載流子遷移率，因此控制了半導體光催化劑的光反應性。為獲得更廣的吸收范圍，傳統(tǒng)的改變半導體催化劑電子結構的方法是摻雜陰離子來降低氧化還原電位和/或載流子遷移率，所以其光反應性通常是有限的，并且一些重要的反應可能根本不會發(fā)生。在本文中，具有獨特電子結構的硫摻雜石墨相氮化碳(C3N4-xSx)，會將提高導帶的最小值，并與輕微的吸光率降低相結合，增加價帶帶寬。在λ>300和400nm時C3N4-xSx存在的光反應中氫氣的生成分別7.2倍和8倍于C3N4。更顯著的是，在λ>400時對于C3N4-xSx可以發(fā)生完成的苯酚的氧化過程，而這對于C3N4來說，即使是λ>300也是不可能的。同一種族的硫代替了晶格氮，隨之而來的量子限制效應被認為是特殊的電子結構引起的，因此表明C3N4-xSx具有良好的光反應性。這一結果提供了設計潛在的有效的光催化劑的一種基本的摻雜方法。
英文字數(shù)（字符數(shù)不計空格）：32018
概略內(nèi)容：
Graphitic carbon nitride (g-C3N4) and boron-doped g-C3N4 were prepared by heating melamine and the mixture of
melamine and boron oxide, respectively. X-ray diffraction, X-ray photoelectron spectroscopy, andUV-vis spectra were
used to describe the properties of as-prepared samples. The electron paramagnetic resonance was used to detect the
active species for the photodegradation reaction over g-C3N4. The photodegradation mechanisms for two typical dyes,
rhodamine B (Rh B) and methyl orange (MO), are proposed based on our comparison experiments. In the g-C3N4
photocatalysis system, the photodegradation of Rh B and MO is attributed to the direct hole oxidation and overall
reaction, respectively; however, for the MO photodegradation the reduction process initiated by photogenerated
electrons is a major photocatalytic process compared with the oxidation process induced by photogenerated holes.
Boron doping for g-C3N4 can promote photodegradation of Rh B because the boron doping improves the dye adsorption
and light absorption of catalyst.
